Fujitsu launches new SPI FRAMs in 0.18µm Technology
Fujitsu Semiconductor has started sampling customers with the new SPI FRAMs based on its 0.18µm technology. FRAM (Ferroelectric Random Access Memory) combines the advantages of fast writing SRAM with non-volatile Flash into one device.
The new SPI FRAM family MB85RSxxx incorporates three devices: MB85RS256A, MB85RS128A and MB85RS64A, which represent three density levels of 256Kbit, 128Kbit and 64Kbit, respectively. All devices operate at a voltage range between 3.0 and 3.6V and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55degree centrigate. Operating frequency has been significantly increased to a maximum of 25MHz, and since FRAM products render voltage boosters unnecessary for the writing process, they are well suited for low-power applications. The products are offered in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.
With in-house development and manufacturing, this builds up the basis of a substantial and high-quality product to be offered to the market with a stable supply chain. FRAM standalone memory devices are used in metering, factory automation applications as well as various industrial segments, where data logging, high speed write access and high endurance is essential.
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