Freescale rolls out its first GaN RF Product
VARINDIA- INDIA'S FRONTLINE IT MAGAZINE
Freescale has revealed its first RF power amplifier product built using gallium nitride (GaN) technology. Freescale’s first GaN product, the AFG25HW355S device, is the latest addition to the portfolio of power amplifier solutions.
The current Freescale RF power offerings include 12V, 28V and 50V silicon LDMOS products, 5V GaAs HBT, 5V and 12V GaAs pHEMT solutions, and high-frequency SiGe technology featuring operation up to 100 GHz and beyond.
"Freescale's GaN RF power solutions underscore our technology-agnostic approach to the RF power market. Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions," said Ritu Favre, Vice-President & General Manager, Freescale's RF Division.
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